IMPLANTED ZnTe BY CATHODO AND PHOTOLUMINESCENCE

In this paper, we present the luminescence properties of Boron and Aluminium implanted ZnTe. Once implanted and eventually annealed, ZnTe is deepened by Argon ionic sputtering to different depths (down to 2.2 ~). Then cathodoluminescence at 77°K and photoluminescence at 4.2°K are performed on each step. ¥rom the spectral distribution and the quantum efficiency measurements, it appears clearly that the effect of implantation is significant far beyond the penetration depth of impurities.On the other hand, annealing at 550 u C during 30 minutes is not sufficient to eliminate the created damage. On the contrary, far from the surface, the annealing reduces the quantum efficiency.A model, based on the interaction between damage and lumi­ nescent centers associated with implantation, is proposed to explain the behaviour of implanted impurities in II-VI semiconductors.Impor­ tant conclusions are also inferred in order to improve the external quantum efficiency of ZnTe implanted electroluminescent diodes.