Fabrication of one-dimensional “trenched” GaN nanowires and their interconnections

In this work, a new approach of nanowire fabrication utilizing selective growth of planar GaN wires embedded into the insulating matrix is reported. The selective growth has been released by means of a Six Ny mask and a metal-organic chemical vapour deposition. The main advantage of the investigated fabrication process is a planar geometry of the wires allowing the use of conventional interconnection techniques such as optical lithography. Design, fabrication technology and interconnection geometry of some early examples are discussed. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)