Triazidogallium and Derivatives: New Precursors to Thin Films and Nanoparticles of GaN

The synthesis and properties of [Ga(N3)3]∞ (1) and the related derivatives [(Do)nGa(N3)3] (2a-d: Do = THF, NEt3, NMe3, quinuclidine, n = 1; 2e: Do = pyridine; n = 3), Li[(CH3)Ga(N3)3] (3), [(N3)2Ga{(CH2)3NMe2}] (4), [Cp(CO)2-Fe-Ga(N3)2(py)] (5), and [(CO)4Co-Ga(N3)2(NMe3)] (6) are reported. Compounds 2e and 4 were characterized by single-crystal X-ray diffraction. The deposition of polycrystalline GaN thin films from 2a-e by solution methods (spin-on pyrolysis) and the solid-state pyrolysis of 1 to give GaN nanoparticles are described.