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Point defect reaction in the heavily doped n type CZ-Si during crystal growth process
Point defect reaction in the heavily doped n type CZ-Si during crystal growth process
2019
Kozo Nakamura
Shingo Narimatsu
Takeshi Senda
Susumu Maeda
Keywords:
Crystallography
Crystal growth
Crystallographic defect
Doping
Materials science
impurity effect
defect reaction
Correction
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