Z 2 -FET DC hysteresis: Deep understanding and preliminary model

Z 2 -FET, a partially gated diode, was explored for ESD application due to its sharp switching behavior [1,2]. 1T-DRAM application of Z 2 -FET has recently been evidenced [3,4] leading to an even stronger interest for this device. However, a deep explanation of physical phenomena involved in Z 2 -FET operation has not been proposed yet. In this paper, we pro-vide a detailed description of the Z 2 -FET DC behavior based on TCAD simulations and propose corresponding analytical modeling.