p-type silicon doping profiling using electrochemical anodization

We have developed an electrochemical method allowing an accurate determination of doping profiles in p-type silicon. Our approach is based on a precise and reproducible measurement of the anodization potential during the formation of porous silicon. The technique is tested on a reference sample with staircase doping profile ranging from 1017 to 1019 cm−3. It is shown that the depth resolution is readily linked to the doping level. For high doping concentrations, it approaches that of the secondary ion mass spectroscopy analysis with an estimated value of 60 nm/decade.