Photoluminescence imaging for determining the spatially resolved implied open circuit voltage of silicon solar cells

Photoluminescence imaging has widely been used as a characterisation tool for the development of silicon solar cells. However, photoluminescence images typically only give qualitative information due to the presence of an unknown calibration constant. In this work, quasi-steady-state photoconductance measurements on partially processed solar cells and I-V measurements on finished solar cells are used to determine the calibration constants to yield spatially resolved implied open circuit voltage images. This technique is then applied to determine the implied open circuit voltage of laser doped selective emitter solar cells at various stages of cell fabrication after the formation of the full area aluminium back surface field when other characterisation techniques such as photoconductance cannot be used.