A new multilevel interconnection system for submicrometer VLSI's using multilayered dielectrics of plasma Silicon Oxide and low-thermal-expansion polyimide

A new multilevel interconnection system for submicrometer VLSI's has been developed that utilizes multilayered dielectrics of inorganic and organic materials. This system was achieved by using the low-thermal-expansion polyimide PIQ-L100 underlying plasma CVD silicon oxide and doing an etch-back of overthick PIQ-L100. As the most important parameters of this system, the multilayered dielectric thickness and etch-back process of overthick PIQ-L100 were investigated.