IGCT (integrated gate commutated thyristor) based H-bridge power module

The invention discloses an IGCT (integrated gate commutated thyristor) based H-bridge power module, which comprises an IGCT press-fitting string, a freewheel diode press-fitting string, an absorption diode press-fitting string and a support frame, wherein the support frame is used for supporting the IGCT press-fitting string, the freewheel diode press-fitting diode string and the absorption diode press-fitting string. The H-bridge power module disclosed by the invention adopts a three-string type press fitting mode, and two two-level circuits are integrated into a whole body, thereby greatly improving the integration level and the power density of the H-bridge power module, ensuring a simple structure of the module at the same time, and being easy for electrical connection and maintenance operations.