Short-time annealing of as-grown p-CdTe wafers

Undoped p-CdTe bulk crystals were grown by the vertical Bridgman method from a slightly Cd-rich melt. The crystals were characterized by X-ray diffraction and topography, capacitance-voltage and low-temperature photoluminescence (PL) measurements. The compensation conditions of NA-ND approximately=3*1015 cm-3 were obtained for the as-grown crystals. The as-grown p-CdTe monocrystalline wafers were short-time annealed in liquid Ga to create a donor-doped layer. To distinguish the role of Ga, the same annealing was done in Cd vapour and in a vacuum. The PL spectra at 4.2 K over all the volume of the annealed wafers have been studied. The changes of PL lines were connected with the interaction between Ga dopant and the native structural defects and residual impurities.