Effect of IrMn inserted layer on anomalous-Hall resistance and spin-Hall magnetoresistance in Pt/IrMn/YIG heterostructures

T. Shang,Heming Yang,Qingfeng Zhan,Zhenghu Zuo,Yali Xie,L. Liu,Suohui Zhang,Y.Z. Zhang,Hanxuan Li,Baomin Wang,Yang Wu,Shufeng Zhang,Run-Wei Li

Effect of IrMn inserted layer on anomalous-Hall resistance and spin-Hall magnetoresistance in Pt/IrMn/YIG heterostructures

2016

T. Shang
Heming Yang
Qingfeng Zhan
Zhenghu Zuo
Yali Xie
L. Liu
Suohui Zhang
Y.Z. Zhang
Hanxuan Li
Baomin Wang
Yang Wu
Shufeng Zhang
Run-Wei Li

National Natural Science foundation of China [11274321, 11404349, 51502314, 51522105, 11374312]; Key Research Program of the Chinese Academy of Sciences [KJZD-EW-M05]; U.S. National Science Foundation [ECCS-1404542]

Keywords:

Ferromagnetism
Magnetoresistance
Spin Hall effect
Condensed matter physics
Spin-½
chinese academy of sciences
Heterojunction
Magnetic moment
Materials science

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