SCT 박막의 미세구조 및 구조적인 특성

The (Sr 0.85 Cao 0.15 )TiO₃(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/SiO₂/Si) using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of 100~500[℃]. The optimum conditions of RF power and Ar/O₂ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[Å/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by annealing at 600℃.