Water Vapor Permeation Properties of Al 2 O 3 /TiO 2 Passivation Layer Deposited by Atomic Layer Deposition

In this study, and films was deposited on to PES (poly(ethersulfon) substrate by using atomic layer deposition as functions of deposition temperature and plasma power. The density and carbon contents of and films was changed by varying process conditions. High density thin films was achieved through optimizing the process conditions. Buffer layer was deposited prior to the processing of upper thin films to avoid PES surface destruction during the high power plasma process and to enhances the tortuous path for water vapor permeation for the defect decoupling effect. The water vapor transmission rate by using MOCON test was investigated to analyze the effect. Water vaper permeation properties was improved by using the inorganic multi-layer passivation layer and activation energy of the water vapor permeation was increased.