Dependence of RF/Analog and Linearity Figure of Merits on Temperature in Ferroelectric FinFET: A Simulation Study

This paper presents a simulation study of the impact of variation in temperature on transfer characteristics and RF/analog performance like transconductance (gm), gate capacitance (Cgg), cut off frequency (ft), transconductance frequency product (TFP) of Ferroelectric FinFET (Fe-FinFET). Also, the impact of temperature on linearity parameters such as higher order harmonics (gm2 and gm3), second and third order voltage intercept points (VIP2 and VIP3), third order power intercept point (IIP3), third order intermodulation distortion (IMD3), and 1-dB compression point are estimated for wide variation of temperature in Fe-FinFET. It is seen that temperature has significant impact on RF/analog and linearity parameters and these figure of merits (FoMs) are functions of temperature. Analysis reports that RF/analog parameters are suppressed, whereas, linearity FoMs are improved as temperature changed from 250 to 350 K.