Control of Secondary Defects by Tin Diffusion in Ion Implanted Silicon Crystals
1975
We have found that the generation of the secondary defects and the ionization ratio of the implanted ions in the ion implanted layers were affected by tin atoms present prior to the implantation. This paper reports the electrical properties and the electron microscopic observation of the secondary defects in the boron implanted layers.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
8
References
0
Citations
NaN
KQI