All-Wet, Metal-Compatible High-Dose-Implanted Photoresist Strip

George G. Totir,Mahmoud Khojasteh,Ronald W. Nunes,Emanuel I. Cooper,Matthew Kern,Kim Van Berkel,Makonnen Payne,Ronald A. DellaGuardia,Bang To,Siegfried L. Maurer

All-Wet, Metal-Compatible High-Dose-Implanted Photoresist Strip

2012

George G. Totir
Mahmoud Khojasteh
Ronald W. Nunes
Emanuel I. Cooper
Matthew Kern
Kim Van Berkel
Makonnen Payne
Ronald A. DellaGuardia
Bang To
Siegfried L. Maurer

An all-wet process based on a novel chemistry has been developed to enable the removal of high-dose implanted photoresist in the presence of exposed metal layers and other materials typical of advanced gate stacks.

Keywords:

High-κ dielectric
Metal gate
Dopant
Photoresist
Composite material
Metallurgy
Materials science
Metal
Tin
gate stack
Compatibility (mechanics)

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