Reactive diffusion in W-Mo-Si thin films

This study reports the phase formation in the ternary thin films system Mo–W–Si. The metallic films were deposited onto Si (100) substrate by sputtering. Two kinds of samples were prepared, either by sequential deposition or by co-deposition. The phase formation was investigated by In situ X-ray diffraction measurements from 300 to 900 °C. The influence of the sample preparation, namely sequential deposition and co-deposition, on the mechanism of phase formation has been evidenced.