New approach for 193-nm resist using modified cycloolefin resin

We have investigated new photoresist materials based on modified cycloolefin-maleic anhydride resin for 193nm lithography. Compared to COMA resin, the new resin offers several good properties such as UV transmittance, taper in pattern profile, PED stability and storage stability. The resist using the new resin showed good lithographic performances on ArF exposure tool. So, we obtained good hole patterns below 90nm with condition of exposure: PAS 5500/900 full field scanner, resist thickness: 320nm, development: 2.38% TMAH, for 40sec., Illumination: 0.61NA, conventional SOB: 110 degree(s)C/90sec, PEB:130 degree(s)C/90sec, on BARC. In this paper we will report on the properties of new polymer and will show the contact hole pattern that demonstrate progress in these areas.