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Scaling of Hf-based gate dielectrics - Integration with polysilicon gates
Scaling of Hf-based gate dielectrics - Integration with polysilicon gates
2004
S. De Gendt
Matty Caymax
J. Chen
Martine Claes
Thierry Conard
Annelies Delabie
W. Deweerd
V. Kaushik
A. Kerber
S. Kubicek
M. Niwa
L. Pantisano
Riikka L. Puurunen
L. A. Ragnarsson
T. Schram
Y. Shimamoto
W. Tsai
E. Rohr
S. Van Elshocht
Wilfried Vandervorst
T. Witters
E. Young
Chao Zhao
Marc Heyns
Keywords:
Dielectric
Metal gate
Polysilicon depletion effect
Electronic engineering
Scaling
Materials science
Optoelectronics
Correction
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