Sources of Non-Linearity in GaAs MESFET Frequency Multipliers

Transconductance and output conductance non-linearities of a single gate GaAs MESFET are used to define promising multiplier bias levels and harmonic loads. The model enables design of 25 mW 4-8 GHz doubler with 6 dB gain, 20 mW 4-12 GHz tripler with 3 dB gain and 2 mW 4-16 GHz quadruple with 2 dB gain.