DESIGN AND SIMULATION OF AN RF/MICROWAVE AMPLIFIER AT 5 GHz FOR MAXIMUM GAIN AND LOW NOISE-USING ATF-36077

In this paper, a maximum gain and low noise amplifier using S parameter for field effect transistor (FET) devices using avago technologies (ATF 36077) was designed and simulated. The low noise amplifier (LNA) has a VDS of 1.5V and IDS of 10Ma. The design specifications consist of 5.0 GHz operating frequency, microstrip line with substrate Ԑr=4.5, thickness of 1.6 mm and tangent loss of 0.019. High Electron Mobility Transistor (HEMT) was used. Advanced design system (ADS) software was used for the design and simulation process. The maximum available gain, the associated power gain when the input matched for the minimum noise figure and Gain of transistor (S21) in dB were 12.912 dB, 10.714 dB and 9.033 dB respectively when operating at 5 GHz.