GDNMOS: A new high voltage device for ESD protection in 28nm UTBB FD-SOI technology

We propose a novel device (GDNMOS: Gated Diode merged NMOS) fabricated with 28nm UTBB FD-SOI high-k metal gate technology. Variable electrostatic doping (gate-induced) in diode and transistor body enables reconfigurable operation, in particular in thyristor mode. This innovative architecture demonstrates excellent capability for high-voltage protection while maintaining a latch-up free behavior.