Dependence of GaN HEMT AM/AM and AM/PM non-linearity on AlGaN barrier layer thickness

In this paper we present the dependence of Gallium nitride (GaN) high electron mobility transistor (HEMT) AM/AM and AM/PM non-linearities on AlGaN barrier layer thickness (Tbar). While the effect of barrier layer thickness on two-dimensional electron gas density has been shown earlier, in this paper we show for the first time that Tbar affects the non-linear behavior of the device through the changes in channel effective mobility and capacitances. We accurately model five different GaN HEMT devices with Tbar varying from 8 nm to 25 nm using a physics-based model and use the developed accurate model as a tool to analyze the non-linear behavior of the GaN HEMT device.