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Electrical and physical properties of HfO 2 deposited via ALD using Hf(OtBu) 4 and ozone atop Al 2 O 3
Electrical and physical properties of HfO 2 deposited via ALD using Hf(OtBu) 4 and ozone atop Al 2 O 3
2004
Hyo Sik Chang
S. K. Back
Hokyung Park
Hyunsang Hwang
Jae-Hwan Oh
W. S. Shin
J. H. Yeo
Ki-Hyun Hwang
S. W. Nam
Hyun-Bae Lee
C. L. Song
D. W. Moon
Mann-Ho Cho
Keywords:
Inorganic chemistry
Materials science
Ozone
Correction
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