Cu-Mn alloy sputtering target and the semiconductor wiring

Containing Mn0.05~20wt%, Be, B, Mg, Al, Si, Ca, Ba, La, total Ce is 500wtppm or less, the balance being a Cu and unavoidable impurities Cu-Mn alloy sputtering target. Allowed have a self-diffusion suppression function for semiconductor copper alloy wiring itself, contamination of the surrounding wires by the diffusion of active Cu can be effectively prevented, and electromigration (EM) resistance, improve the corrosion resistance, the barrier layer is arbitrarily formable and easily, further semiconductor copper alloy wiring and the wiring for forming a sputtering target as well as a semiconductor copper alloy wiring is possible to simplify the step of forming the semiconductor copper alloy wiring to provide a method for forming.