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New Model Proposed for Switching Mechanism of ReRAM
New Model Proposed for Switching Mechanism of ReRAM
2006
K. Kinoshita
T. Tamura
H. Aso
H. Noshiro
C. Yoshida
M Aoki
Y. Sugiyama
H Tanaka
Keywords:
Semiconductor device modeling
Dielectric strength
Energy consumption
Capacitor
Voltage
Resistive random-access memory
Film capacitor
Electrode
Electrical engineering
Materials science
Electronic engineering
Optoelectronics
Sputtering
Correction
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