Energy and dose dependence of silicon top layer and buried oxide layer thicknesses in SIMOX substrates

Abstract The formation of SIMOX (separation by implanted oxygen) substrates involves the implantation of very high doses of oxygen into silicon. A model has been developed to predict the evolution of the oxygen depth profile taking into account sputtering, swelling and oxygen redistribution during implantation as well as chemical segregation during high temperature annealing. The resulting computer code IRIS (implantation of reactive ions into silicon) enables a fast calculation of oxygen profiles to be made. The simulation results discussed in this paper cover the energy range 50–300 keV and doses of up to 2.5 × 10 18 O + cm −2 .