Blankmask, photomask and it's manufacturing method

PURPOSE: A blank mask, a photomask and a manufacturing method thereof are provided to increase CD(Critical Dimension) by removing a substrate dependence phenomenon of a chemical amplification resist film. CONSTITUTION: An etch stop layer(2) of a chrome carbonate nitride material is laminated on a transparent substrate(1) with the thickness of 15 nm. The etch stop layer of the chrome carbonate nitride material is laminated by an reactive sputtering method. A MoTaSi shielding layer(3) is laminated on the etch stop layer with the thickness of 30 nm. A MoTaSiN reflection prevention layer(4) is laminated on the MoTaSi shielding layer with the thickness of 10 nm. The hard mask layer of a chrome carbonate nitride material is laminated on the MoTaSiN shielding layer with the thickness of 10 nm. A surface of a hard mask layer is processed using a hot plate. A positive photoresist for a positive chemical amplification of an electron-beam exposure device is spin-coated with the thickness of 200 nm and 300 nm. A blank mask is made by performing a soft bake process.