Ferromagnet-free spin transistor and method for operation

The spin transistor according to the invention, consists of a material having a spin Hall effect, by receiving the e having a spin in a predetermined direction from the input, and the input unit is configured to forward e having a spin in a predetermined direction to the connecting portion, the gate by rotating the electron has a spin in a predetermined direction in accordance with the gate voltage applied to the electrode and a connecting portion that is configured to pass to the output.