Resonant excitation of vibrational modes on a microrelief surface of GaAs

Infrared spectroscopy and scanning electron microscopy were used in an investigation of the dynamics of changes in the intensities of the vibrational bands of a natural oxide formed on GaAs as a function of the surface microrelief morphology and the oxide thickness. The observed enhancement of the intensities of the vibrational modes was attributed tentatively to the Anderson localization of infrared radiation in the randomly disordered surface structure formed by anisotropic etching