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Theoretical study on interface orientation dependence of Si thermal oxidation ofVertical-BC-MOSFET with compressive strain
Theoretical study on interface orientation dependence of Si thermal oxidation ofVertical-BC-MOSFET with compressive strain
2017
Shingo Kawachi
Hiroki Shirakawa
Kenta Chokawa
Masaaki Araidai
Hiroyuki Kageshima
Tetsuo Endoh
Kenji Shiraishi
Keywords:
MOSFET
Thermal oxidation
Semiconductor
Composite material
Strain (chemistry)
Materials science
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