Infrared dielectric properties of BaTiO3 ultrathin films
2008
Using high accurate infrared spectroscopic ellipsometry, the infrared dielectric constants of BaTiO 3 ultrathin films are
obtained in the temperature ranging from 20 to 150°C, which were deposited on Pt-Ti-SiO 2 -Si substrate by radio
frequency magnetron sputtering. The high frequency dielectric function of the BaTiO 3 ultrathin films shows the
temperature dependence from the tetragonal to the cubic phase transition. The results suggest that the temperature
dependence of the BaTiO 3 ultrathin films' infrared dielectric properties should be considered in the technological
applications and theoretical investigations.
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