Evidence for GaAs substrate strain caused by a CdTe epitaxial layer

Abstract The 400 Bragg intensities of a 3 μm thick single crystal CdTe epitaxial layer on a [100] GaAs substrate have been measured between 6.8 and 380 K. The results clearly show that the Debye temperature of the substrate surface is higher than that of the bulk substrate which implies that the substrate surface is strained. This contrasts with common thinking that only the interface of the epitaxial layer is strained by the deposition.