Boron implantation into CdTe

Abstract The behaviour of 12 B implanted into p-type, highly resistive n-type and n-type CdTe is investigated by the β-NMR method. At the Larmor frequency a single line resonance shows up which indicates that a measurable boron fraction is in a diamagnetic charge state and occupies positions with cubic environment. This boron population is about 15% in highly resistive n-type CdTe at room temperature and rises with increasing implantation temperature. In CdTe:Cd and CdTe:Te crystals the cubic boron fraction starts from a value of 10%. Activation energies, which are deduced from the data, are similar for highly resistive n-type CdTe and CdTe:Cd (0.39(5) and 0.44(5) eV, respectively), but are different in case of CdTe:Te (0.71(5) eV) indicating different annealing processes. Only in CdTe:Cd a boron population that is exposed to defects is detected by the Δm = 2 NMR transition. These defects are characterized by a mean electric field coupling constant of 210(20) kHz.