Old Web
English
Sign In
Acemap
>
Paper
>
Design and Fabrication of Packaged Wideband Transimpedance Amplifier by using InGaAs/InP HBT Technology
Design and Fabrication of Packaged Wideband Transimpedance Amplifier by using InGaAs/InP HBT Technology
2004
Lee Jong-Min
Kim Seong-il
Min Byoung-Gue
Ju Cheol-Won
Lee Kyung-Ho
Keywords:
Heterojunction bipolar transistor
Transimpedance amplifier
Optoelectronics
Wideband
Materials science
Fabrication
Correction
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]