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Thermodynamic designed energy model

2003 
A thermodynamic designed energy model for semiconductor devices is discussed. A system of evolution equations based on an expression for the density of the free energy is derived. First principles such as entropy maximum principle and the principle of partial local equilibrium are applied. The free energy is assumed as the sum of the internal free energy and the electrostatic field energy. A 1.55 /spl mu/m RW MQW laser is used in the simulations.
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