Hard silicon carbonitride films obtained by RF-plasma-enhanced chemical vapour deposition using the single-source precursor bis(trimethylsilyl)carbodiimide

2006 
Amorphous silicon carbon nitride (Si/C/N) coatings were prepared on steel substrates by RF plasma-enhanced chemical vapour deposition (RF-PECVD) from the single-source precursor bis(trimethylsilyl)carbodiimide (BTSC). The films were characterised by X-ray diffraction (XRD), ellipsometry, FTIR, glow discharge optical emission spectroscopy (GDOES), optical microscopy, AFM, hardness measurements, scratch-, tribological- and corrosion-tests. The results of these studies show that the coatings obtained on the RF-powered electrode (cathode) were black, thick (>20 μm) and hard (21–29 GPa), while those grown on the grounded electrode (anode) were yellow, thin (<4 μm) and soft (∼5 GPa). Coatings on the anode contained around 19 at.% oxygen and exhibited silicon predominantly bonded to oxygen. In contrast, the oxygen content of the films deposited on the cathode was below 2 at.%. Silicon atoms in these coatings are co-ordinated predominantly to nitrogen and carbon. The surface of all coatings was very smooth with a maximum rms roughness between 2 nm and 5 nm for an area of 5 μm × 5 μm. Scratch and tribological tests reveal a brittle nature of the cathode-coatings and rather weak adhesion to the metal substrates. Salt-spray tests indicate an excellent corrosion resistance of the material.
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