Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor

Abstract In the present work, the potential of hafnium silicate (Hf x Si y O 2 ) films as an alternative gate dielectric to SiO 2 for future technology generations is demonstrated. Thermally stable Hf x Si y O 2 films are deposited from a single-source MOCVD precursor. I – V and C – V measurement data are presented and effects of post-deposition annealing on electrical properties are discussed. A 900 °C O 2 -anneal shows best results in terms of leakage current characteristics and is, therefore, intensively investigated.