Dose determination of nickel implantations in silicon wafers

The dose of nickel ions implanted with an energy of 300 keV or 6 MeV, respectively, into silicon wafers was measured by X-ray fluorescence analysis (XRFA) after the implantation process. Dose values for Ni were determined within the range from 5×1015 to 1×1018 ions/cm2. The detection limit of this simple and non-destructive procedure amounts to about 1014 atoms/cm2. The accuracy was confirmed by flame atomic absorption spectrometry (FAAS), total-reflection X-ray fluorescence analysis (TXRFA), and by Rutherford-backscattering spectroscopy (RBS). The study confirms XRFA to be a suitable method for dose determinations after the implantation process.