Outstanding reliability of heavy ion irradiated AlInN/GaN on silicon HFETs

AlInN/GaN heterostructure field-effect transistors (HFETs) grown on silicon withstand irradiation with 75-MeV sulfur ions up to fluences of $5.5 \times 10 ^{13}$ ions/cm2. The static transistor operation characteristics of the devices exhibit a shift of the threshold voltage and a decrease in the saturation and the OFF-state current. Microphotoluminescence spectroscopy reveals a decrease in the electron carrier density in the channel region. Simulations were performed to model the damage caused to the devices assuming the generation of acceptor-like defects upon irradiation. It turns out that the degradation depends on the thickness of the buffer layer. Therefore, we propose the reduction in the thickness of the buffer layer as a way to increase the radiation tolerance of HFETs.