Study on the Impacts of Hole Injection and Inclusion of Sub-Oxide and Metallic Si Atoms on Repeatable Resistance Switching of Sputter-Deposited Silicon Oxide Films

This paper demonstrates and discusses the roles of hole injection from the silicon substrate and inclusion of sub-oxide and metallic Si atoms in the repeatable resistance switching of sputter-deposited silicon oxide films. The roles of not only Si sub-oxide but also metallic Si atoms, are investigated in detail. In addition, we show how the structure of the interface between conductive filaments in the low-resistance state and the surrounding silicon oxide film influences the achievement of repeatable resistance switching.