Naphthoylene(trifluoromethylbenzimidazole)-dicarboxylic acid imides for high-performance n-type organic field-effect transistors

1,8-Naphthoylene(trifluoromethylbenzimidazole)-4,5-dicarboxylic acid imide (NTFBII) derivatives were synthesized. The OFET devices based on these new materials showed typical n-type OFET behavior and achieved an electron mobility as high as 0.10 cm2 V−1 s−1 with good bias stress stability.