Research and Modeling of Heat Exchange Module of Plasma-Chemical Processing

Plasma-chemical etching processes occur in a dynamic mode at low pressures. Under these conditions, developed slip effects are manifested, under which there are significant deviations from the medium characteristics. This fact requires the introduction of additions into the developed process model. A brief review of papers devoted to the existing problems of heat transfer between the substrate and the substrate holder in the plasma-chemical process has been carried out. It was shown that the development of a model of contact heat transfer between the substrate and the substrate holder, will allow optimizing the design and technological solutions to low-temperature plasma-chemical processes.