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Ge(100)表面の極薄TiOxキャッピングによるHfO2原子層堆積/熱処理時の界面反応制御
Ge(100)表面の極薄TiOxキャッピングによるHfO2原子層堆積/熱処理時の界面反応制御
2011
hideki murakami
tomohiro fuzioka
teruo oota
kento misima
seiitirou higasi
seiiti miyazaki
Keywords:
Atomic layer deposition
X-ray photoelectron spectroscopy
Inorganic chemistry
Analytical chemistry
Materials science
interfacial reaction
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