Characteristics of ultrashallow p + /n junction prepared cluster boron (B 18 H 22 ) ion implantation and excimer laser annealing

Ultrashallow junction ( + /n junction formed by B 18 H 22 cluster ion implantation and excimer laser annealing (ELA) is demonstrated. B 18 H 22 + equivalent implantation energy at 0.25 keV readily forms an amorphous-silicon (a-Si) layer without additional Si + or Ge + implantation. After ELA at 500 mJ/cm 2 , diffusion of the boron profile was almost negligible, which can be explained by selective melting of a-Si