Infrared analysis of the bulk silicon-hydrogen bonds as an optimization tool for high-rate deposition of microcrystalline silicon solar cells

It is demonstrated that the signature of bulk hydrogen stretching modes in the infrared of microcrystalline silicon (μc-Si:H) deposited at high deposition rates can be used for solar cell optimization in the high pressure depletion regime. A relation between the performance of a p-i-n solar cell and the hydride stretching modes corresponding to hydrogenated crystalline grain boundaries is observed. These crystalline surfaces show postdeposition oxidation and the absence of these surfaces in the μc-Si:H matrix reflects device grade microcrystalline material.