Method for realizing Si-Si bonding through adoption of amorphous germanium film

The present invention provides a method for realizing Si-Si bonding through adoption of an amorphous germanium film, and relates to a Si wafer bonding method. The method comprises: selecting Si substrate materials with crystal direction as (100), performing cleaning; boiling the substrate materials through adoption of a mixed solution of H2SO4 and H2O2, and immersing the substrate materials in a mixed solution of HF and H2O2; boiling the processed Si wafer in a mixed solution of NH4OH, H2O2 and H2O, and immersing Si wafer in a mixed solution of HF and H2O2; boiling the processed Si wafer in a mixed solution of HCL, H2O2 and H2O, and immersing the Si wafer in a mixed solution of HF and H2O2; drying the processed Si wafer to put the Si wafer into a direct current magnetron sputtering system, filling Ar gas into a sputtering chamber when the base pressure of the sputtering chamber is smaller than 1*10 Pa; sputtering a-Ge thin film through regulation of direct current sputtering current and sample holder rotation speed; and realizing high-intensity Si-Si bonding through adoption of a hydrophilic a-Ge layer.