Low-temperature process and growth enhancement of a-oriented YBa2Cu3Ox thin films by oxygen plasma

Abstract YBa 2 Cu 3 O x (YBCO) films were prepared by ion beam sputtering (IBS) at low temperatures of 450–650°C with supply of oxygen molecules or plasma. The growth of a -axis-oriented phase ( a -phase) was enhanced by the plasma, then it could be grown at the lowest temperature of 450°C. The crystallinity and surface of a -phase were improved by the plasma. The growth enhancement of a -phase relating to the substrate temperature, oxygen partial pressure and the supply of oxygen plasma are interpreted in terms of thermal migration, particle-assisted migration and surface energy , respectively.