Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials

Potassium double tungstates doped with different rare-earth (RE) ions, have been shown as promising materials to provide high, broadband, stable gain at different wavelengths including ~1 μm (Yb3+), 1.55 μm (Er3+) and ~2 μm (Tm3+). In this paper, the utilization of this material in nanophotonic platforms will be presented. Several plasmonic structures of interest have been theoretically proposed. The integration and fabrication techniques required to produce these devices, namely bonding, thin layer transfer and focused ion beam milling have been developed. This work represents the first step towards the utilization of rare-earth doped double tungstates in nanophotonics.