High performance epitaxial HgCdTe photodiodes for 2.7 µm applications

High performance photovoltaic devices tailored for 2.7 µm cut-off have been fabricated on liquid phase epitaxial HgCdTe/CdTe. The peak external quantum efficiency is measured to be 67% without any AR-coating. The measured zero-bias resistance-area (R 0 A) product is 5 ∼ 10 4 µ-cm 2 at 195K and µ10 7 Ω-cm 2 at 140K. The demonstrated performance of HgCdTe photovoltaic devices tailored for a 2.7 µm cut-off is considerably better than conventional PbS photodetectors, which have appeared in available literature and which are currently in wide use in this spectral range.